Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes

CHEN Yong-qiu; LIU Yu-lan; WANG Biao

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CHEN Yong-qiu, LIU Yu-lan, WANG Biao. Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes[J]. Applied Mathematics and Mechanics, 2006, 27(8): 899-903.

Citation:

CHEN Yong-qiu, LIU Yu-lan, WANG Biao. Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes[J]. Applied Mathematics and Mechanics, 2006, 27(8): 899-903.

Citation:

CHEN Yong-qiu, LIU Yu-lan, WANG Biao. Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes[J]. Applied Mathematics and Mechanics, 2006, 27(8): 899-903.

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Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes

1.
School of Mechanical and Power Engineering, Harbin University of Science and Technology, Harbin 150080, P. R. China;

Received Date: 2005-06-07
Rev Recd Date: 2006-04-30
Publish Date: 2006-08-15

Abstract

Abstract

Ferroelectric domain switching under low voltage or short pulses is of interest to the development of high-density random access memory(FRAM)devices.Being necessarily very small in size,instability and back switching often occurs when the external voltage is removed,and creates serious problems.A general approach to determine the minimum size of ferroelectric domain to avoid back switching was developed,and as an example,a 180 degree domain in a ferroelectric thin film covered by the upper and lower electrodes was considered in detail.The results show that the approach is generally applicable to many other fields,including phase transformation,nucleation and expansion of dislocation loops in thin films,etc.
- ferroelectric film,
- 180 degree domain,
- stability analysis,
- back switching

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References(13)

References

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